R6035ENZ1C9
Manufacturer:
Rohm Semiconductor
Mfr.Part #:
R6035ENZ1C9
Datasheet:
Description:
MOSFETs TO-236-3 SMD/SMT N-Channel number of channels:1 350 mW 600 V Continuous Drain Current (ID):1 mA
| Parameter | Value |
|---|---|
| Continuous Drain Current (ID) | 1 mA |
| Max Operating Temperature | 150 °C |
| Drain to Source Resistance | 2.4 Ω |
| Input capacitance | 15 pF |
| Gate to Source Voltage (Vgs) | 10 V |
| Power Dissipation | 350 mW |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Number of Channels | 1 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
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